規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 230mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.5V, 4.5V |
| RdsOn(Max)@IdVgs | 3Ohm @ 100mA, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| Vgs(Max) | ±10V |
| InputCapacitance(Ciss)(Max)@Vds | 14.1 pF @ 15 V |
| PowerDissipation(Max) | 350mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | X2-DFN1006-3 |
概述
Description
The DMN26D0UFB4-7 is a specific part number for a semiconductor device, typically a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This particular component is used in electronic circuits for switching and amplifying signals.
Key features generally include low on-resistance for energy efficiency, fast switching speed, and a compact package suitable for surface mounting on PCBs (Printed Circuit Boards). It is designed to handle low to moderate power applications, making it ideal for use in power management, load switching, and signal processing within consumer electronics, industrial equipment, and automotive systems.
The device is usually available in configurations such as SOT-23 or other small footprint packages, which makes it suitable for high-density circuit designs. Understanding its datasheet is crucial for engineers to implement it correctly in their designs, ensuring compatibility with voltage and current requirements specific to their applications.
Key features generally include low on-resistance for energy efficiency, fast switching speed, and a compact package suitable for surface mounting on PCBs (Printed Circuit Boards). It is designed to handle low to moderate power applications, making it ideal for use in power management, load switching, and signal processing within consumer electronics, industrial equipment, and automotive systems.
The device is usually available in configurations such as SOT-23 or other small footprint packages, which makes it suitable for high-density circuit designs. Understanding its datasheet is crucial for engineers to implement it correctly in their designs, ensuring compatibility with voltage and current requirements specific to their applications.
Equivalent
Features
The DMN26D0UFB4-7 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Dual N-Channel Configuration: Offers two MOSFETs in a single package, saving space and simplifying circuit design.
2. Low On-Resistance: Provides efficient current conduction with minimal power loss, contributing to the overall energy efficiency of the device.
3. Small Package Size: Typically available in a compact package that is suitable for space-constrained applications, such as portable electronics.
4. High Speed Switching: Facilitates fast signal switching, which is ideal for high-frequency applications.
5. Low Gate Charge: Reduces the power required to drive the MOSFET, making it suitable for battery-powered devices.
6. Thermal Efficiency: Designed to handle substantial power dissipation with robust thermal management capabilities.
7. RoHS Compliant: Meets environmental standards for hazardous materials, ensuring eco-friendly operation.
These features make the DMN26D0UFB4-7 suitable for applications that require efficient power conversion and management, such as power supplies, motor controls, and switching regulators.
1. Dual N-Channel Configuration: Offers two MOSFETs in a single package, saving space and simplifying circuit design.
2. Low On-Resistance: Provides efficient current conduction with minimal power loss, contributing to the overall energy efficiency of the device.
3. Small Package Size: Typically available in a compact package that is suitable for space-constrained applications, such as portable electronics.
4. High Speed Switching: Facilitates fast signal switching, which is ideal for high-frequency applications.
5. Low Gate Charge: Reduces the power required to drive the MOSFET, making it suitable for battery-powered devices.
6. Thermal Efficiency: Designed to handle substantial power dissipation with robust thermal management capabilities.
7. RoHS Compliant: Meets environmental standards for hazardous materials, ensuring eco-friendly operation.
These features make the DMN26D0UFB4-7 suitable for applications that require efficient power conversion and management, such as power supplies, motor controls, and switching regulators.
Pinout
The DMN26D0UFB4-7 is a MOSFET transistor, specifically a dual N-channel MOSFET. It is commonly housed in a U-DFN2020-6 package, which typically has 6 pins. The functions of these pins are as follows:
1. Drain 1 (D1): Connects to the drain of the first MOSFET channel.
2. Gate 1 (G1): Controls the gate of the first MOSFET channel.
3. Source 1 (S1): Connects to the source of the first MOSFET channel.
4. Source 2 (S2): Connects to the source of the second MOSFET channel.
5. Gate 2 (G2): Controls the gate of the second MOSFET channel.
6. Drain 2 (D2): Connects to the drain of the second MOSFET channel.
This dual N-channel MOSFET is used for switching and amplifying electronic signals. It is designed for low on-resistance and high efficiency, suitable for power management applications.
1. Drain 1 (D1): Connects to the drain of the first MOSFET channel.
2. Gate 1 (G1): Controls the gate of the first MOSFET channel.
3. Source 1 (S1): Connects to the source of the first MOSFET channel.
4. Source 2 (S2): Connects to the source of the second MOSFET channel.
5. Gate 2 (G2): Controls the gate of the second MOSFET channel.
6. Drain 2 (D2): Connects to the drain of the second MOSFET channel.
This dual N-channel MOSFET is used for switching and amplifying electronic signals. It is designed for low on-resistance and high efficiency, suitable for power management applications.
Manufacturer
The DMN26D0UFB4-7 is manufactured by Diodes Incorporated. Diodes Incorporated is a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. The company focuses on delivering innovative semiconductor solutions to meet the needs of advanced electronic systems, serving a diverse range of markets including automotive, industrial, computing, consumer electronics, and communications.
Application
The DMN26D0UFB4-7 is a MOSFET transistor often used in various electronic applications due to its efficiency and compact size. Common application areas include power management systems, load switching, DC-DC converters, and motor control circuits. It's also used in consumer electronics, automotive systems, and portable devices where low voltage operation and high efficiency are crucial. The MOSFET's ability to handle high-speed switching makes it suitable for use in digital electronics and RF applications as well.
Package
The DMN26D0UFB4-7 is a MOSFET transistor housed in a DFN2020 package, which is a compact, surface-mount package designed for efficient thermal management and space-saving on printed circuit boards.
