規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 32A |
| Rds On(Max) @ Id Vgs | 7.6mOhm @ 20A, 8V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.7nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1255pF @ 15V |
| Power - Max | 12W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
"CSD87351Q5D" seems to refer to an integrated circuit or power management device, likely produced by a company such as Texas Instruments or a similar manufacturer. These types of components are often used in electronics to manage power distribution, conversion, or amplification.
The introduction to such a device would typically cover its key specifications and applications. These might include:
- Voltage and Current Ratings: The maximum voltage and current the device can handle.
- Efficiency: How efficiently the device operates, often a critical factor for power management components.
- Switching Frequency: Relevant for devices involved in power conversion to indicate how fast they can switch states.
- Thermal Performance: How well the device dissipates heat, which is crucial for reliability.
- Applications: Common uses might include consumer electronics, telecommunications, automotive systems, or industrial equipment.
For precise specifications, consulting the official datasheet or manufacturer's documentation is recommended, as it provides in-depth details specific to the device model.
The introduction to such a device would typically cover its key specifications and applications. These might include:
- Voltage and Current Ratings: The maximum voltage and current the device can handle.
- Efficiency: How efficiently the device operates, often a critical factor for power management components.
- Switching Frequency: Relevant for devices involved in power conversion to indicate how fast they can switch states.
- Thermal Performance: How well the device dissipates heat, which is crucial for reliability.
- Applications: Common uses might include consumer electronics, telecommunications, automotive systems, or industrial equipment.
For precise specifications, consulting the official datasheet or manufacturer's documentation is recommended, as it provides in-depth details specific to the device model.
Equivalent
The CSD87351Q5D is a synchronous buck NexFET™ power block from Texas Instruments. Equivalent products may include similar power stages or half-bridge drivers from other manufacturers. Consider options like the Integrated Power Stage solutions from Infineon (e.g., OptiMOS™), ON Semiconductor's FDMF series, or Vishay's SiC6xx series. Ensure compatibility with your specific application requirements such as voltage, current, and package dimensions when selecting an alternative.
Features
The CSD87351Q5D is a power block module from Texas Instruments, designed for high-efficiency and high-frequency power conversion applications. Key features include:
1. Integrated Solution: Combines a high-side and a low-side MOSFET with a driver, optimizing performance and simplifying design.
2. Efficiency: Offers high efficiency with low switching losses, making it ideal for applications requiring minimal power loss.
3. Switching Frequency: Supports high-frequency operations, allowing for smaller and more efficient power supply designs.
4. Footprint: Comes in a compact 5x6 mm DualCool™ package, reducing board space.
5. Thermal Performance: Designed for excellent thermal management with a low thermal resistance package that enhances heat dissipation.
6. Protection Features: Includes built-in protection mechanisms such as under-voltage lockout, over-current protection, and thermal shutdown to ensure reliable operation.
7. Applications: Suitable for use in data centers, telecom infrastructure, and any other applications requiring efficient power management.
8. Design Flexibility: Easy integration with other components in a power management system, facilitating streamlined design processes.
1. Integrated Solution: Combines a high-side and a low-side MOSFET with a driver, optimizing performance and simplifying design.
2. Efficiency: Offers high efficiency with low switching losses, making it ideal for applications requiring minimal power loss.
3. Switching Frequency: Supports high-frequency operations, allowing for smaller and more efficient power supply designs.
4. Footprint: Comes in a compact 5x6 mm DualCool™ package, reducing board space.
5. Thermal Performance: Designed for excellent thermal management with a low thermal resistance package that enhances heat dissipation.
6. Protection Features: Includes built-in protection mechanisms such as under-voltage lockout, over-current protection, and thermal shutdown to ensure reliable operation.
7. Applications: Suitable for use in data centers, telecom infrastructure, and any other applications requiring efficient power management.
8. Design Flexibility: Easy integration with other components in a power management system, facilitating streamlined design processes.
Pinout
The CSD87351Q5D is a power block MOSFET optimized for synchronous buck applications, often used in high-performance computing and power supply systems. It comes in a QFN (Quad Flat No-leads) package with 8 pins. Here's a concise description of its pin functions:
1. VSW (Pins 1-3): These pins are the switching node and are connected to the output inductor.
2. BOOT (Pin 4): This pin is the bootstrap input for the high-side FET driver, used to provide the necessary gate drive voltage.
3. VIN (Pins 5-6): These are the input voltage pins where the input power is supplied to the device.
4. GND (Pins 7-8): These are the ground pins, providing the return path for the driver and power FETs.
5. PGND (Exposed Pad): This is the power ground and is the primary thermal path for heat dissipation.
Note: It's important to refer to the official datasheet for the most accurate and detailed information about its usage and specifications.
1. VSW (Pins 1-3): These pins are the switching node and are connected to the output inductor.
2. BOOT (Pin 4): This pin is the bootstrap input for the high-side FET driver, used to provide the necessary gate drive voltage.
3. VIN (Pins 5-6): These are the input voltage pins where the input power is supplied to the device.
4. GND (Pins 7-8): These are the ground pins, providing the return path for the driver and power FETs.
5. PGND (Exposed Pad): This is the power ground and is the primary thermal path for heat dissipation.
Note: It's important to refer to the official datasheet for the most accurate and detailed information about its usage and specifications.
Manufacturer
The CSD87351Q5D is manufactured by Texas Instruments, which is an American technology company. Texas Instruments designs and manufactures semiconductors and various integrated circuits, which it sells to electronics designers and manufacturers globally. It is one of the largest semiconductor companies in the world and is known for developing analog chips and embedded processors. The company serves a wide range of industries, including automotive, industrial, personal electronics, communications, and enterprise systems.
Application
The CSD87351Q5D is a power management device often used in applications requiring efficient voltage regulation and power conversion. Typical application areas include computing systems like servers and desktops, telecommunications equipment, and networking devices where high efficiency, compact size, and thermal performance are critical. It is also used in industrial power systems and various consumer electronics, providing efficient power management solutions for devices with demanding power requirements.
Package
The CSD87351Q5D is a power block MOSFET with a DualCool™ package type, specifically designed to enhance thermal performance and efficiency. Its package is compact, with a footprint typically classified as a SON 5 mm x 6 mm, which allows it to handle high current and power density applications effectively.
