規格
| 屬性 | 價值 |
| Package / Case | Box |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 1.015kA (Tc) |
| Rds On(Max) @ Id Vgs | 1.73mOhm @ 760A, 15V |
| Vgs(th)(Max) @ Id | 3.6V @ 280mA |
| Gate Charge(Qg)(Max) @ Vgs | 2724nC @ 15V |
| Input Capacitance(Ciss)(Max) @ Vds | 79400pF @ 800V |
| Power - Max | 50mW |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
