BSZ076N06NS3G

BSZ076N06NS3G is a ROHM N-channel enhancement-mode power MOSFET from the BSZ family. It is intended for switching power electronics and is typically used in DC-DC converters, synchronous buck/boost circuits, motor drivers, and load switches. The suffix suggests its voltage rating and the S3G surface-mount package. Key features generally include trench-type MOS technology for low on-resistance, fast switching, and rugged handling of switching transients (avalanche robustness). Essential specs to check in the datasheet are Vds, Id, Rds(on), Vgs(th), Qgs, Qgd, and the thermal characteristics, plus the pinout for the S3G package. Design considerations include providing appropriate gate drive voltage, adding gate resistance and protection (TVS/diodes), and ensuring adequate heatsinking for safe operation. For exact electrical values and pin configuration, consult the official ROHM BSZ076N06NS3G datasheet. If you want, I can outline typical circuit connections or compare it with similar devices.

Would you like me to look up exact cross-references online? If yes, I’ll pull current equivalents (60V N‑channel MOSFET in S3G package) from major vendors (ST/Infineon/On Semi) and list the closest matches.

BSZ076N06NS3G is a 60 V N‑channel enhancement MOSFET in an S3G (TO-263 style) package. Key features include:
- VDS: 60 V
- RDS(on): ~0.076 Ω (typ) at VGS = 10 V; max about 0.090–0.100 Ω
- High continuous/ pulsed current capability with good thermal performance
- Low gate drive requirements (fast switching, low gate charge)
- Built-in body diode for reverse conduction
- Avalanche energy ruggedness
- RoHS compliant, lead-free
- suitable for switching power supplies, motor drives, and DC‑DC converters
Note: exact numbers vary by lot; please consult the datasheet for precise specifications.

Pin count: 3 pins ( Gate, Drain, Source ).
Function: It is a single N-channel enhancement-mode MOSFET used as a switching transistor. Drain is typically connected to the backside tab. Pinout: Gate (G), Drain (D), Source (S).

- Manufacturer: Infineon Technologies AG.
- What kind of company: A German multinational semiconductor company that designs and manufactures power semiconductors, microcontrollers, sensors, and security ICs for automotive, industrial, and consumer applications.

BSZ076N06NS3G is a 60V N-channel MOSFET intended for switching power applications. Common application areas include:
- Switching regulators and DC-DC converters (buck/boost)
- Motor control and drive circuits (BLDC/stepper)
- Automotive power electronics (load switches, battery-management stages)
- Solar/inverter and energy-storage power stages
- General high-side/low-side switching in consumer and industrial electronics
In short: use it where efficient 60V switching and PWM control are required.

D-PAK (TO-252) surface-mount package.