規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 170mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 8Ohm @ 170mA, 10V |
| Vgs(th)(Max) @ Id | 2V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 19 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
概述
Description
The BSS84PH6327XTSA2 is a P-channel enhancement-mode MOSFET from Infineon, designed for low-power applications. Key features include:
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low Threshold Voltage: -1V (typical)
- Low On-Resistance (RDS(on)): ~5Ω (at VGS = -10V)
- Compact Package: SOT-23 (3-pin), suitable for space-constrained designs
Common uses include load switching, power management, and signal amplification in portable electronics, IoT devices, and battery-powered systems. Its low leakage current and fast switching make it ideal for energy-efficient applications.
For detailed specs, refer to the Infineon datasheet.
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low Threshold Voltage: -1V (typical)
- Low On-Resistance (RDS(on)): ~5Ω (at VGS = -10V)
- Compact Package: SOT-23 (3-pin), suitable for space-constrained designs
Common uses include load switching, power management, and signal amplification in portable electronics, IoT devices, and battery-powered systems. Its low leakage current and fast switching make it ideal for energy-efficient applications.
For detailed specs, refer to the Infineon datasheet.
Equivalent
Equivalent products to the BSS84PH6327XTSA2 (P-channel MOSFET, -50V, -0.13A, SOT-23) include:
- BSS84P (Infineon)
- DMG2305UX (Diodes Inc.)
- NDS356AP (ON Semiconductor)
- SI2305DS (Vishay)
These are similar in specs (voltage, current, package) and can serve as drop-in replacements. Always verify datasheets for exact compatibility.
- BSS84P (Infineon)
- DMG2305UX (Diodes Inc.)
- NDS356AP (ON Semiconductor)
- SI2305DS (Vishay)
These are similar in specs (voltage, current, package) and can serve as drop-in replacements. Always verify datasheets for exact compatibility.
Features
The BSS84PH6327XTSA2 is a P-channel MOSFET with the following key features:
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low On-Resistance (RDS(on)): ~1.5Ω (at VGS = -10V)
- Low Threshold Voltage (VGS(th)): -1V to -3V
- Low Power Consumption: Ideal for battery-powered applications
- Small Package: SOT-23 (3-pin), suitable for space-constrained designs
- Fast Switching Speed: Efficient for load switching and signal control
Common applications include power management, load switching, and signal amplification in portable electronics.
- Voltage Rating: -50V (Drain-Source)
- Current Rating: -130mA (Continuous Drain Current)
- Low On-Resistance (RDS(on)): ~1.5Ω (at VGS = -10V)
- Low Threshold Voltage (VGS(th)): -1V to -3V
- Low Power Consumption: Ideal for battery-powered applications
- Small Package: SOT-23 (3-pin), suitable for space-constrained designs
- Fast Switching Speed: Efficient for load switching and signal control
Common applications include power management, load switching, and signal amplification in portable electronics.
Pinout
The BSS84PH6327XTSA2 is a P-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G) – Controls the switching.
2. Source (S) – Connected to the higher voltage (for P-channel).
3. Drain (D) – Output terminal.
Key Features:
- Logic-level gate drive (suitable for low-voltage applications).
- Low threshold voltage (enhances efficiency in switching).
- Low on-resistance (RDS(on)) for reduced power loss.
Commonly used in load switching, power management, and signal amplification in portable electronics.
1. Gate (G) – Controls the switching.
2. Source (S) – Connected to the higher voltage (for P-channel).
3. Drain (D) – Output terminal.
Key Features:
- Logic-level gate drive (suitable for low-voltage applications).
- Low threshold voltage (enhances efficiency in switching).
- Low on-resistance (RDS(on)) for reduced power loss.
Commonly used in load switching, power management, and signal amplification in portable electronics.
