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BSS138BK,215
+物料清單MOSFET N-CH 60V 360MA TO236AB
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製造商Nexperia美國公司
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製造商部分 #BSS138BK,215
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有存貨4296
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規格
| 屬性 | 價值 |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 360mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 350mA, 10V |
| Vgs(th)(Max) @ Id | 1.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.7 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 56 pF @ 10 V |
| Power Dissipation (Max) | 350mW (Ta), 1.14W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
概述
Description
BSS138BK,215 is a variant of the BSS138 family: a small-signal N-channel enhancement MOSFET in a SOT-23 package, used for switching and level shifting on compact boards.
Key points:
- Voltage/current: typical VDS ≈ 50 V; ID around 180 mA; RDS(on) ≈ 3–4 Ω at VGS ≈ 4.5 V.
- Gate threshold: typically ~0.8–2.5 V, suitable for logic-level operation.
- Package: 3-pin SOT-23; gate, drain, source (pinout varies by manufacturer—check the specific datasheet).
- Common uses: logic-level switching, I2C/SPI level shifting, small signal or load switching in compact circuits.
- Variant note: BK and “215” often indicate packaging, lot, or manufacturer-specific suffixes; electrical specs are those of the BSS138 family—verify exact data for the specific supplier.
If you need precise numbers for a design, pull the exact datasheet for the BSS138BK from the chosen manufacturer.
Key points:
- Voltage/current: typical VDS ≈ 50 V; ID around 180 mA; RDS(on) ≈ 3–4 Ω at VGS ≈ 4.5 V.
- Gate threshold: typically ~0.8–2.5 V, suitable for logic-level operation.
- Package: 3-pin SOT-23; gate, drain, source (pinout varies by manufacturer—check the specific datasheet).
- Common uses: logic-level switching, I2C/SPI level shifting, small signal or load switching in compact circuits.
- Variant note: BK and “215” often indicate packaging, lot, or manufacturer-specific suffixes; electrical specs are those of the BSS138 family—verify exact data for the specific supplier.
If you need precise numbers for a design, pull the exact datasheet for the BSS138BK from the chosen manufacturer.
Equivalent
Equivalent parts for BSS138BK,215 (50V N‑channel logic‑level MOSFET in SOT‑23) include:
- 2N7002 (NXP/ON Semiconductor)
- 3N7002 (Vishay/Fairchild/ON Semiconductor)
- 2N7002K (Toshiba)
All are similar 50–60V N‑channel MOSFETs suitable for level shifting/small switching. When substituting, check Vds ≥ 50V, Id ≈ 0.15–0.2A, Vgs(th), and Rds(on) at your operating gate voltage (2.5–4.5V).
- 2N7002 (NXP/ON Semiconductor)
- 3N7002 (Vishay/Fairchild/ON Semiconductor)
- 2N7002K (Toshiba)
All are similar 50–60V N‑channel MOSFETs suitable for level shifting/small switching. When substituting, check Vds ≥ 50V, Id ≈ 0.15–0.2A, Vgs(th), and Rds(on) at your operating gate voltage (2.5–4.5V).
Features
BSS138BK, 215 Features (concise):
- N-channel enhancement-mode MOSFET
- VDS: 50 V
- ID (continuous): ~180–220 mA
- RDS(on): max ~3.5 Ω at VGS = 4.5 V (higher at lower VGS)
- VGS(th): approx 0.6–1.5 V
- Logic-level drive: suitable for 2.5–4.5 V gate voltages
- Low gate charge / input capacitance for faster switching
- Package: SOT-23, 3-pin; Pb-free, RoHS compliant
- Typical uses: level shifting (e.g., I2C), small-signal switching, load switching
- N-channel enhancement-mode MOSFET
- VDS: 50 V
- ID (continuous): ~180–220 mA
- RDS(on): max ~3.5 Ω at VGS = 4.5 V (higher at lower VGS)
- VGS(th): approx 0.6–1.5 V
- Logic-level drive: suitable for 2.5–4.5 V gate voltages
- Low gate charge / input capacitance for faster switching
- Package: SOT-23, 3-pin; Pb-free, RoHS compliant
- Typical uses: level shifting (e.g., I2C), small-signal switching, load switching
Pinout
Pin count: 3 pins (SOT-23 package).
Function: N-channel enhancement-mode MOSFET (logic-level) used as a small-signal switch or level-shifter in low-voltage circuits.
Function: N-channel enhancement-mode MOSFET (logic-level) used as a small-signal switch or level-shifter in low-voltage circuits.
Manufacturer
Manufacturer: Diodes Incorporated.
What kind of company: Diodes Inc. is a U.S.-based semiconductor manufacturer (fabless/global supplier) that designs and supplies discrete semiconductors, MOSFETs, diodes, analog and power-management ICs for consumer, computing and industrial applications.
What kind of company: Diodes Inc. is a U.S.-based semiconductor manufacturer (fabless/global supplier) that designs and supplies discrete semiconductors, MOSFETs, diodes, analog and power-management ICs for consumer, computing and industrial applications.
Application
BSS138BK (N-channel MOSFET, SOT-23) is widely used for:
- Bidirectional logic-level shifting between voltage domains (e.g., 1.8–5V I2C, SPI, UART).
- General small-signal switching for microcontroller/FPGA interfaces (digital signals, buffering).
- Load-switch / power-gating element in compact, low-current battery-powered boards.
- Prototyping and compact circuits where a small N-channel FET is required for switching or isolation.
- Bidirectional logic-level shifting between voltage domains (e.g., 1.8–5V I2C, SPI, UART).
- General small-signal switching for microcontroller/FPGA interfaces (digital signals, buffering).
- Load-switch / power-gating element in compact, low-current battery-powered boards.
- Prototyping and compact circuits where a small N-channel FET is required for switching or isolation.
Package
BSS138BK,215 is supplied in a 3-pin SOT-23 surface-mount package (TO‑236AB).
