BSP135H6327

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BSP135H6327

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  • 製造商英飛淩科技

  • 製造商部分 #BSP135H6327

  • 有存貨7646

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規格

屬性 價值
Manufacturer Infineon Technologies
Package SOT-223-4
OperatingTemperature -55℃~+150℃
RDS(on) 60Ω@10V,0.12A
DraintoSourceVoltage 600V
Pd-PowerDissipation 1.8W
Current-ContinuousDrain(Id) 120mA
ReverseTransferCapacitance(Crss@Vds) 5.1pF
GateCharge(Qg) 4.9nC@3V
Number 1 N-channel
InputCapacitance(Ciss) 146pF@3V

概述

Description

BSP135H6327 is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. It features a compact design suitable for various electronic circuits, including power management and switching applications. This MOSFET is known for its high efficiency, fast switching capability, and low on-resistance, which makes it ideal for enhancing power efficiency in circuits.
Common specifications include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) rating of up to 2.6A, and a low gate threshold voltage. The device is often housed in a SOT-23 package, facilitating easy integration into compact designs.
BSP135H6327 is widely used in consumer electronics, automotive applications, and industrial control systems, making it a versatile choice for engineers looking to create efficient and reliable electronic solutions. Always refer to the manufacturer's datasheet for specific electrical characteristics and thermal management guidelines.

Equivalent

The BSP135H6327 is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, among others. When selecting a substitute, ensure the voltage, current ratings, and package type match your application requirements. Always refer to the specific datasheets for detailed comparisons.

Features

The BSP135H6327 is a N-channel MOSFET known for its low on-resistance and high-speed switching capabilities. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (VDS) of 60V.
2. Current Rating: Continuous drain current (ID) can reach up to 3.5A.
3. On-Resistance (RDS(on)): Low on-resistance, around 0.5 ohms at VGS = 10V, which enhances efficiency.
4. Gate Threshold Voltage (VGS(th)): Generally ranges between 1V to 3V, making it suitable for low-voltage applications.
5. Package Type: Offered in a compact SOT-23 package, facilitating easy integration in space-constrained designs.
6. Fast Switching Speed: Suitable for high-frequency applications, increasing overall system performance.
7. Thermal Resistance: Features a low thermal resistance, which aids in heat dissipation during operation.
These attributes make the BSP135H6327 ideal for applications in power management, motor control, and signal switching.

Pinout

The BSP135H6327 is an N-channel MOSFET commonly used in various electronic applications. It typically comes in a TO-220 package, which has 3 pins. The functions of these pins are as follows:
1. Gate (G) - This pin is used to control the MOSFET, allowing the user to switch the device on or off by applying a voltage.
2. Drain (D) - The drain pin is where the load is connected. It allows current to flow to the load when the MOSFET is in the "on" state.
3. Source (S) - The source pin is connected to the ground or the lower potential in the circuit.
The BSP135H6327 is used in applications such as switching power supplies, motor drivers, and other high-efficiency circuits. It features low on-resistance, which helps minimize power loss during operation.

Manufacturer

The BSP135H6327 is manufactured by NXP Semiconductors. NXP is a global semiconductor company that specializes in designing and manufacturing a wide range of products, including microcontrollers, processors, and various types of analog and digital chips. They serve multiple sectors, such as automotive, industrial, IoT, mobile, and communication infrastructure.
NXP is known for its focus on security and connectivity solutions, particularly in the rapidly evolving fields of automotive technology and smart devices. The company was originally part of Philips and has since become a leader in the semiconductor industry, offering innovative solutions that enable smart connected systems.

Application

The BSP135H6327 is a N-channel MOSFET primarily used in power management applications. Its key application areas include switching power supplies, DC-DC converters, and motor control circuits. Additionally, it is utilized in low-side switching for load management in consumer electronics, lighting control, and battery-powered devices. The device's low on-resistance and fast switching capabilities make it suitable for efficient power handling in various electronic circuits.

Package

The BSP135H6327 is typically packaged in a SOT-23 (Surface-Mounted Device) package type, which is a small, compact package suitable for surface mount technology applications.

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