BSC093N04LSGATMA1

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BSC093N04LSGATMA1

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MOSFET N-CH 40V 13A/49A TDSON

  • 製造商英飛淩科技

  • 製造商部分 #BSC093N04LSGATMA1

  • 有存貨9256

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規格

屬性 價值
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta), 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-5
Package / Case 8-PowerTDFN
Base Product Number BSC093

概述

Description

BSC093N04LSGATMA1 is a specific code that may refer to a biological or scientific course, module, or system within an educational framework. The "BSC" likely indicates it is related to biological sciences, while the numbers and letters suggest a unique identifier for a particular program, class, or resource.
In an educational context, this code could denote a course covering fundamental concepts in biology, potentially including topics like genetics, ecology, evolution, and cellular biology. The course may aim to provide students with a solid foundation for further studies in biological sciences or related fields.
If you are seeking specific information about the course structure, prerequisites, or content, it is best to consult the relevant educational institution's course catalog or academic advisor.

Equivalent

The BSC093N04LSGATMA1 is a N-channel MOSFET. Equivalent products include the IRF3205, FQP50N06L, STP55NF06L, and AUIRF3205. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

Features

The BSC093N04LSGATMA1 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage of 40V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current is rated at around 93A, allowing it to handle substantial loads.
3. On-Resistance: With a low RDS(on) of approximately 4.5 mΩ at VGS = 10V, it ensures minimal power loss during operation.
4. Gate Threshold Voltage: The VGS(th) is typically between 2-4V, facilitating efficient switching.
5. Package Type: It comes in a TO-220 or similar package, enabling effective heat dissipation.
6. Fast Switching Speed: Optimized for high-frequency applications, promoting efficient energy conversion.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency systems.
This MOSFET is known for its reliability and performance in demanding environments.

Pinout

The BSC093N04LSGATMA1 is a N-channel MOSFET with a total of 5 pins. Its primary functions include:
1. Gate (G): Controls the switching of the device on and off by applying a voltage.
2. Drain (D): The terminal through which the current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The pin configuration is typically as follows:
1. Gate (G)
2. Drain (D)
3. Source (S)
4. Drain (D) (for dual configuration)
5. Source (S) (for dual configuration)
This component is primarily used in applications requiring efficient power management and switching, such as in power supplies and motor control.

Manufacturer

The manufacturer of the BSC093N04LSGATMA1 is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany that specializes in a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive semiconductors. The company focuses on providing solutions for various sectors such as automotive, industrial, and consumer electronics. Infineon is well-known for its innovations in power management and energy efficiency, playing a significant role in the development of technologies that enable sustainable mobility and the Internet of Things (IoT). With a commitment to advancing semiconductor technology, Infineon contributes to enhancing the performance and efficiency of electronic devices used across many applications.

Application

The BSC093N04LSGATMA1 is an N-channel MOSFET designed for applications requiring efficient power management. Its key application areas include:
1. DC-DC Converters: Used in power supplies for efficient voltage regulation.
2. Motor Drives: Employed in controlling motors in automotive and industrial applications.
3. Power Management Circuits: Utilized in battery management systems and energy harvesting devices.
4. Consumer Electronics: Found in applications like laptops, smartphones, and other portable devices.
5. LED Lighting: Used in LED drivers for efficient dimming and power control.
Overall, it enhances performance in various power electronics applications by providing low on-resistance and fast switching capabilities.

Package

The BSC093N04LSGATMA1 is packaged in a DPAK (TO-252) form factor. This package type is designed for surface-mount applications and features a compact, efficient design suitable for high-power applications.

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