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規格
| 屬性 | 價值 |
| Package / Case | DIL-SMT-2 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 100 C |
| Mounting Type | SMD/SMT |
| Brand | ams OSRAM |
| Product Type | Photodiodes |
| Subcategory | Optical Detectors & Sensors |
| Height | 1.2 mm |
| Pd - Power Dissipation | 150 mW |
| Product | PIN Photodiodes |
| Peak Wavelength | 850 nm |
| Dark Current | 2 nA |
| Vr - Reverse Voltage | 32 V |
| Rise Time | 20 ns |
| Fall Time | 20 ns |
| Half Intensity Angle Degrees | 60 deg |
| If - Forward Current | 100 mA |
| Length | 4.5 mm |
| Noise Equivalent Power - NEP | 4.1E-14 W/sqrt Hz |
| Photocurrent | 80 uA |
| Responsivity | 0.62 A/W |
| Vf - Forward Voltage | 1.3 V |
| Width | 4 mm |
概述
Description
The BPW34S-Z is a silicon photodiode primarily used for light detection in various applications, including optical communication, medical devices, and environmental sensing. It features high sensitivity, a low dark current, and a wide spectral response, typically ranging from ultraviolet to near-infrared wavelengths (approximately 200 nm to 1100 nm).
This photodiode is designed for low-light situations, making it suitable for applications such as light meters and photometry. It has a small, compact size, which facilitates integration into various electronic systems. The BPW34S-Z operates efficiently in photovoltaic mode, generating a voltage when exposed to light, or in photoconductive mode, where it provides a current proportional to the light intensity.
Commonly used in conjunction with amplifiers and filters, the BPW34S-Z can enhance performance in more complex systems. Its robustness and reliability make it a popular choice for engineers and developers in creating light-sensing solutions.
This photodiode is designed for low-light situations, making it suitable for applications such as light meters and photometry. It has a small, compact size, which facilitates integration into various electronic systems. The BPW34S-Z operates efficiently in photovoltaic mode, generating a voltage when exposed to light, or in photoconductive mode, where it provides a current proportional to the light intensity.
Commonly used in conjunction with amplifiers and filters, the BPW34S-Z can enhance performance in more complex systems. Its robustness and reliability make it a popular choice for engineers and developers in creating light-sensing solutions.
Equivalent
The BPW34S-Z is a photodiode often used in light sensing applications. Equivalent products include the BPW34, BPW21, and the SFH203. Other alternatives might include the L14F1, L14F2, or similar silicon photodiodes with comparable specifications in terms of sensitivity, response time, and wavelength range. Always check the datasheet for specific electrical characteristics to ensure compatibility.
Features
The BPW34S-Z is a high-performance Schottky diode, renowned for its fast switching capability and low forward voltage drop. Key features include:
1. Voltage Rating: Typically handles reverse voltages up to 40V.
2. Current Rating: Capable of conducting continuous currents of up to 3A.
3. Low Forward Voltage Drop: Offers efficient operation, reducing power loss in applications.
4. Fast Recovery Time: Ideal for high-frequency applications, ensuring minimal delay in switching.
5. Small Package Size: Available in a compact SMD package, suitable for space-constrained designs.
6. Thermal Stability: Designed to operate reliably across a wide temperature range.
7. Low Leakage Current: Enhances efficiency and reduces unwanted power consumption.
These features make the BPW34S-Z suitable for use in power supplies, rectification circuits, and various electronic devices requiring efficient voltage regulation and switching performance.
1. Voltage Rating: Typically handles reverse voltages up to 40V.
2. Current Rating: Capable of conducting continuous currents of up to 3A.
3. Low Forward Voltage Drop: Offers efficient operation, reducing power loss in applications.
4. Fast Recovery Time: Ideal for high-frequency applications, ensuring minimal delay in switching.
5. Small Package Size: Available in a compact SMD package, suitable for space-constrained designs.
6. Thermal Stability: Designed to operate reliably across a wide temperature range.
7. Low Leakage Current: Enhances efficiency and reduces unwanted power consumption.
These features make the BPW34S-Z suitable for use in power supplies, rectification circuits, and various electronic devices requiring efficient voltage regulation and switching performance.
Pinout
The BPW34S-Z is a photodiode with a total of three pins. The pin configuration and their functions are as follows:
1. Anode (A): This pin is connected to the positive side of the photodiode and collects the generated photocurrent when exposed to light.
2. Cathode (K): This pin is connected to the negative side and is used for grounding or connecting to the circuit.
3. Case/Shield (S): This pin is typically connected to the ground or an electrical shield to minimize noise and interference.
The BPW34S-Z is designed for high sensitivity and fast response, making it suitable for applications in optical communication, light sensing, and other photodetection tasks. The device operates effectively in the visible to near-infrared spectrum.
1. Anode (A): This pin is connected to the positive side of the photodiode and collects the generated photocurrent when exposed to light.
2. Cathode (K): This pin is connected to the negative side and is used for grounding or connecting to the circuit.
3. Case/Shield (S): This pin is typically connected to the ground or an electrical shield to minimize noise and interference.
The BPW34S-Z is designed for high sensitivity and fast response, making it suitable for applications in optical communication, light sensing, and other photodetection tasks. The device operates effectively in the visible to near-infrared spectrum.
Manufacturer
The BPW34S-Z is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET components, focusing on high-quality and reliable solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in semiconductor technology and aims to deliver efficient, compact, and high-performance products to meet the needs of its customers. Founded as a spin-off from NXP Semiconductors, Nexperia has established itself as a key player in the semiconductor industry, emphasizing innovation and sustainability in its manufacturing processes.
Application
The BPW34S-Z is a silicon photodiode primarily used in various optical applications. Its application areas include:
1. Light Detection: Used in light measurement and sensing applications.
2. Optical Communication: Employed in fiber optic systems for signal reception.
3. Medical Equipment: Utilized in devices like pulse oximeters and phototherapy equipment.
4. Consumer Electronics: Found in cameras and automatic brightness control systems.
5. Industrial Automation: Used for position and presence detection in sensors.
These applications benefit from its high sensitivity and fast response time.
1. Light Detection: Used in light measurement and sensing applications.
2. Optical Communication: Employed in fiber optic systems for signal reception.
3. Medical Equipment: Utilized in devices like pulse oximeters and phototherapy equipment.
4. Consumer Electronics: Found in cameras and automatic brightness control systems.
5. Industrial Automation: Used for position and presence detection in sensors.
These applications benefit from its high sensitivity and fast response time.
Package
The BPW34S-Z is typically packaged in a DO-214AA (SMD) or similar surface mount package. It is a photodiode designed for optical applications, featuring a compact form factor suitable for integration into electronic circuits.