規格
| 屬性 | 價值 |
| Package / Case | Strip |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 800 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 700mV @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 250 @ 100mA, 1V |
| Power - Max | 310 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The BC817-40W is a general-purpose NPN bipolar junction transistor (BJT) in a SOT-323 surface-mount package. Key features:
- Current Rating: 500mA collector current (Ic).
- Voltage Rating: 45V collector-emitter voltage (Vceo).
- Gain (hFE): 250–600 (at Ic=2mA, Vce=1V).
- Low Power: Suitable for switching and amplification in low-power circuits.
- Package: Compact SOT-323 (ideal for space-constrained designs).
Common applications include signal amplification, switching loads in digital circuits (e.g., driving LEDs, relays), and use in consumer electronics. It is a variant of the BC817 series with higher current gain (hFE) compared to standard versions.
Alternatives: BC807-40W (PNP counterpart), BC817-16W (lower gain variant).
Datasheet parameters should be verified for specific design needs.
- Current Rating: 500mA collector current (Ic).
- Voltage Rating: 45V collector-emitter voltage (Vceo).
- Gain (hFE): 250–600 (at Ic=2mA, Vce=1V).
- Low Power: Suitable for switching and amplification in low-power circuits.
- Package: Compact SOT-323 (ideal for space-constrained designs).
Common applications include signal amplification, switching loads in digital circuits (e.g., driving LEDs, relays), and use in consumer electronics. It is a variant of the BC817 series with higher current gain (hFE) compared to standard versions.
Alternatives: BC807-40W (PNP counterpart), BC817-16W (lower gain variant).
Datasheet parameters should be verified for specific design needs.
Equivalent
Equivalent products to the BC817-40W (NPN transistor, 45V, 500mA, 250MHz) include:
- BC807-40W (PNP complement)
- 2N2222A (higher power)
- MMBT4401 (similar specs)
- KSP2222A (TO-92 equivalent)
- BC547B (lower current)
- S8050 (common alternative)
Check datasheets for exact compatibility in your circuit.
- BC807-40W (PNP complement)
- 2N2222A (higher power)
- MMBT4401 (similar specs)
- KSP2222A (TO-92 equivalent)
- BC547B (lower current)
- S8050 (common alternative)
Check datasheets for exact compatibility in your circuit.
Features
The BC817-40W is a general-purpose NPN transistor in a SOT-323 package. Key features:
- Current Rating: 500mA collector current (IC)
- Voltage Rating: 45V collector-emitter (VCEO)
- Gain (hFE): 250–600 (high linearity at 100mA)
- Low Saturation Voltage: VCE(sat) ~0.7V (IC=500mA)
- Power Dissipation: 300mW
- High Efficiency: Fast switching (transition frequency ~100MHz)
- Applications: Amplification, switching, LED drivers, and load control in compact circuits.
Compact and reliable, it’s ideal for space-constrained designs.
- Current Rating: 500mA collector current (IC)
- Voltage Rating: 45V collector-emitter (VCEO)
- Gain (hFE): 250–600 (high linearity at 100mA)
- Low Saturation Voltage: VCE(sat) ~0.7V (IC=500mA)
- Power Dissipation: 300mW
- High Efficiency: Fast switching (transition frequency ~100MHz)
- Applications: Amplification, switching, LED drivers, and load control in compact circuits.
Compact and reliable, it’s ideal for space-constrained designs.
Pinout
The BC817-40W is a NPN bipolar junction transistor (BJT) in a SOT-323 (SC-70) surface-mount package with 3 pins:
1. Emitter (E) – Connected to ground or common reference.
2. Base (B) – Controls the transistor's switching/amplification.
3. Collector (C) – Output for amplified/switched current.
Key Features:
- VCEO: 45V (max collector-emitter voltage).
- IC: 500mA (max continuous collector current).
- hFE (gain): 250–600 (@ IC = 2mA).
- Fast switching (for general-purpose amplification/switching).
Commonly used in low-power circuits, signal amplification, and switching applications.
1. Emitter (E) – Connected to ground or common reference.
2. Base (B) – Controls the transistor's switching/amplification.
3. Collector (C) – Output for amplified/switched current.
Key Features:
- VCEO: 45V (max collector-emitter voltage).
- IC: 500mA (max continuous collector current).
- hFE (gain): 250–600 (@ IC = 2mA).
- Fast switching (for general-purpose amplification/switching).
Commonly used in low-power circuits, signal amplification, and switching applications.
Application
The BC817-40W is a general-purpose NPN transistor commonly used in:
1. Switching Circuits – For relays, LEDs, and small loads.
2. Amplification – Low-power signal amplification in audio and RF stages.
3. Digital Logic – Interface and driver circuits in microcontrollers.
4. Consumer Electronics – TVs, radios, and portable devices.
5. Automotive Electronics – Sensors and control modules (non-critical).
Its high current gain (hFE ≈ 250–600) and low saturation voltage make it suitable for low-power applications.
1. Switching Circuits – For relays, LEDs, and small loads.
2. Amplification – Low-power signal amplification in audio and RF stages.
3. Digital Logic – Interface and driver circuits in microcontrollers.
4. Consumer Electronics – TVs, radios, and portable devices.
5. Automotive Electronics – Sensors and control modules (non-critical).
Its high current gain (hFE ≈ 250–600) and low saturation voltage make it suitable for low-power applications.
Package
The BC817-40W is a SOT-323 surface-mount package (SC-70) NPN transistor. It is compact, with three leads, and designed for general-purpose amplification and switching applications. The "W" suffix typically denotes a tape-and-reel packaging option for automated assembly. Dimensions are approximately 2.0mm x 1.25mm x 0.9mm.
