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BAT54H
+物料清單30V INDEPENDENT TYPE 200MA 800MV
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製造商深圳市思科微電晶體有限公司。
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製造商部分 #BAT54H
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規格
| 屬性 | 價值 |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 100 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package | SC-76, SOD-323 |
| Supplier Device Package | SOD-323 |
| Operating Temperature - Junction | 150°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Reverse Recovery Time (trr) | 5 ns |
概述
Description
Key points:
- Very low forward voltage (roughly 0.2–0.4 V at modest current) and fast switching (no recovery time).
- Reverse voltage typically in the 20–30 V range; forward current capability depends on the exact variant.
- Three-lead SOT-23 package; the two diodes share a common terminal (anode or cathode depending on variant).
Note: The H suffix identifies a specific BAT54H variant; check the exact datasheet for the precise pinout and electrical ratings for your design.
Equivalent
Features
- Dual Schottky diodes, common cathode, three-pin SOT-23 package
- Reverse voltage VRRM: 30 V; forward current IF(AV) ~200 mA per diode
- Very low forward voltage drop (typ ~0.25 V at modest current; rises slightly with higher current)
- Fast switching with negligible reverse recovery
- Low leakage current (reverse) and suitable for high-speed/low-power apps
- Wide operating temperature range (typically -55°C to +125°C)
- Applications: OR-ing, clamping/protection, level shifting, and other high-speed, low-voltage tasks
Note: exact numbers can vary by manufacturer; check the specific datasheet for your part variant.
Pinout
Function: Dual Schottky barrier diodes in one package with a common terminal (BAT54H, common-anode variant). Used for fast switching and low forward voltage drop.
Manufacturer
Company type: A global manufacturer of electronic components, including semiconductors and passive components (diodes, transistors, resistors, capacitors, inductors).
Application
- Low-voltage rectification and power-supply startup in portable devices
- Input protection, clamping, and level shifting for CMOS/TTL logic
- Diode-OR/steering networks and reverse-polarity protection on low-voltage rails
- High-speed signal detection, envelope detectors, and RF front-ends
- Tiny-signal mixer and demodulator front-ends in RF circuits
Note: suitable for low-current, high-speed switching in compact, low-voltage applications.