規格
| 屬性 | 價值 |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Current - Average Rectified(Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 90 V |
| Capacitance @ Vr F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
概述
Description
BAS29 is a part-number used by several vendors for small-signal semiconductors. Most commonly it denotes a BAS29 NPN small-signal transistor used for general switching and amplification in low-power circuits.
Key points (high level):
- Suitable for switching and buffering in signal paths and simple driver stages.
- Usually available in common packages (TO‑92, SOT‑23).
- Exact ratings (Vce, Ic, hFE, pinout) vary by vendor, so specs must be pulled from the specific datasheet.
Important: “BAS29” can refer to different devices (transistor vs. diode variants) depending on manufacturer. For precise parameters, consult the exact datasheet from the supplier (package, max ratings, pinout). If you can share the supplier or confirm whether you mean the BAS29 transistor or a BAS29 diode, I can give exact specs.
Key points (high level):
- Suitable for switching and buffering in signal paths and simple driver stages.
- Usually available in common packages (TO‑92, SOT‑23).
- Exact ratings (Vce, Ic, hFE, pinout) vary by vendor, so specs must be pulled from the specific datasheet.
Important: “BAS29” can refer to different devices (transistor vs. diode variants) depending on manufacturer. For precise parameters, consult the exact datasheet from the supplier (package, max ratings, pinout). If you can share the supplier or confirm whether you mean the BAS29 transistor or a BAS29 diode, I can give exact specs.
Equivalent
Common equivalents for the BAS29 (dual series switching diode) are BAV99 and BAW99 (and their SMD variants such as MMBAV99). Before substituting, verify pinout, breakdown voltage, forward‑voltage, leakage and switching speed to ensure compatibility.
Features
BAS29 is a general-purpose NPN silicon small-signal transistor. Key features:
- NPN transistor suitable for switching and low-power amplification
- Available in common packages (through-hole TO-92 and SMD variants like SOT-23) depending on manufacturer
- Vceo (maximum collector-emitter voltage) typically around 60 V
- Ic (maximum collector current) on the order of tens of mA (varies by device)
- High DC current gain (hFE) in the mid-to-high range, good for signal amplification
- Low saturation voltage when used as a switch
- Suitable for general-purpose circuits, drivers, and logic-level switching
- Temperature range roughly -55°C to +150°C (industry-standard for small-signal transistors)
Note: Exact ratings vary by lot and package; always consult the specific datasheet from the supplier for precise numbers and pinout.
- NPN transistor suitable for switching and low-power amplification
- Available in common packages (through-hole TO-92 and SMD variants like SOT-23) depending on manufacturer
- Vceo (maximum collector-emitter voltage) typically around 60 V
- Ic (maximum collector current) on the order of tens of mA (varies by device)
- High DC current gain (hFE) in the mid-to-high range, good for signal amplification
- Low saturation voltage when used as a switch
- Suitable for general-purpose circuits, drivers, and logic-level switching
- Temperature range roughly -55°C to +150°C (industry-standard for small-signal transistors)
Note: Exact ratings vary by lot and package; always consult the specific datasheet from the supplier for precise numbers and pinout.
Pinout
Pin count: 3 (SOT‑23 package).
Function: BAS29 is a dual small‑signal, high‑speed switching diode (two diodes in series) used for signal switching, level shifting, clamping and protection in RF and logic circuits. Typical pin assignments (SOT‑23) are: pin 1 = anode of first diode, pin 2 = series junction (middle node), pin 3 = cathode of second diode. Check the specific manufacturer datasheet for exact electrical ratings and pin labeling.
Function: BAS29 is a dual small‑signal, high‑speed switching diode (two diodes in series) used for signal switching, level shifting, clamping and protection in RF and logic circuits. Typical pin assignments (SOT‑23) are: pin 1 = anode of first diode, pin 2 = series junction (middle node), pin 3 = cathode of second diode. Check the specific manufacturer datasheet for exact electrical ratings and pin labeling.
Manufacturer
The BAS29 is manufactured by Diodes Incorporated. Diodes Incorporated is a global semiconductor company that designs and manufactures discrete semiconductors, logic, analog and mixed‑signal ICs (including diodes and switching devices) for consumer, computing, communications and industrial markets.
Application
BAS29 is a general‑purpose small‑signal NPN transistor (SMD). Typical application areas:
- Low‑power signal amplification and buffering
- On/off switching and drive stages in digital and mixed‑signal circuits
- Emitter‑follower (buffer) configurations to decouple stages
- Level‑shifting and signal conditioning between blocks
- General‑purpose, compact amplification/switching in consumer electronics and instrumentation
- Low‑power signal amplification and buffering
- On/off switching and drive stages in digital and mixed‑signal circuits
- Emitter‑follower (buffer) configurations to decouple stages
- Level‑shifting and signal conditioning between blocks
- General‑purpose, compact amplification/switching in consumer electronics and instrumentation
Package
BAS29 is a dual fast-switching diode typically packaged in a SOT-23 (3-pin) package. Check the specific datasheet for exact variant.
