規格
| 屬性 | 價值 |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 38A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 38A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2780 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
概述
Description
The AUIRF5210S is a P-channel power MOSFET from Infineon, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: -100V (Drain-Source)
- Current Handling: -24A (continuous) at 25°C
- Low On-Resistance (RDS(on)): 55mΩ (max) at VGS = -10V
- Fast Switching: Optimized for high-speed performance
- Robustness: Avalanche-rated and improved thermal resistance
Commonly used in DC-DC converters, motor control, and power management systems, it offers reliable performance in automotive and industrial applications. The TO-263 (D2PAK) package ensures efficient heat dissipation.
For detailed specs, refer to the datasheet.
- Voltage Rating: -100V (Drain-Source)
- Current Handling: -24A (continuous) at 25°C
- Low On-Resistance (RDS(on)): 55mΩ (max) at VGS = -10V
- Fast Switching: Optimized for high-speed performance
- Robustness: Avalanche-rated and improved thermal resistance
Commonly used in DC-DC converters, motor control, and power management systems, it offers reliable performance in automotive and industrial applications. The TO-263 (D2PAK) package ensures efficient heat dissipation.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the AUIRF5210S (P-channel MOSFET, -100V, -24A) include:
- IRF5210 (similar specs, different package)
- IRF4905 (lower voltage, -55V, -74A)
- FQP27P06 (-60V, -27A)
- STP80PF55 (-55V, -80A)
Check datasheets for exact compatibility in your circuit.
- IRF5210 (similar specs, different package)
- IRF4905 (lower voltage, -55V, -74A)
- FQP27P06 (-60V, -27A)
- STP80PF55 (-55V, -80A)
Check datasheets for exact compatibility in your circuit.
Features
The AUIRF5210S is a P-channel Power MOSFET with the following key features:
- Voltage Rating: -100V (Drain-Source)
- Current Rating: -24A (Continuous Drain Current)
- Low On-Resistance: 70mΩ (max @ VGS = -10V)
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Rated: Robust against inductive load spikes
- Logic-Level Gate Drive: Compatible with -10V gate drive
- Package: TO-263 (D2PAK), suitable for high-power applications
- Applications: Power management, DC-DC converters, motor control
Compact and efficient, it’s ideal for high-voltage switching needs.
- Voltage Rating: -100V (Drain-Source)
- Current Rating: -24A (Continuous Drain Current)
- Low On-Resistance: 70mΩ (max @ VGS = -10V)
- Fast Switching: Optimized for high-efficiency applications
- Avalanche Rated: Robust against inductive load spikes
- Logic-Level Gate Drive: Compatible with -10V gate drive
- Package: TO-263 (D2PAK), suitable for high-power applications
- Applications: Power management, DC-DC converters, motor control
Compact and efficient, it’s ideal for high-voltage switching needs.
Pinout
The AUIRF5210S is a P-channel power MOSFET in a TO-263 (D2PAK) package with 3 pins (Gate, Drain, Source).
Key Features:
- Voltage Rating: -100V
- Current Rating: -33A (continuous)
- Low On-Resistance (RDS(on)): 45mΩ (max)
- Logic-Level Gate Drive (suitable for 5V/10V drive)
- Avalanche-Rugged Design
Pin Functions:
1. Gate (G): Controls switching.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Commonly used in DC-DC converters, motor control, and power switching applications.
Key Features:
- Voltage Rating: -100V
- Current Rating: -33A (continuous)
- Low On-Resistance (RDS(on)): 45mΩ (max)
- Logic-Level Gate Drive (suitable for 5V/10V drive)
- Avalanche-Rugged Design
Pin Functions:
1. Gate (G): Controls switching.
2. Drain (D): Connects to load (negative side for P-channel).
3. Source (S): Connects to power supply (negative rail).
Commonly used in DC-DC converters, motor control, and power switching applications.
Manufacturer
The AUIRF5210S is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance components like MOSFETs and ICs. The company serves industries such as automotive, industrial, and consumer electronics, emphasizing energy efficiency and innovation. The AUIRF5210S is a power MOSFET designed for applications requiring robust switching performance.
Application
The AUIRF5210S, a P-channel power MOSFET, is commonly used in:
1. Power Switching – Efficient load switching in DC-DC converters and power supplies.
2. Motor Control – Driving motors in automotive and industrial systems.
3. Battery Management – Reverse polarity protection and discharge control.
4. Automotive Applications – Electronic control units (ECUs), lighting, and infotainment systems.
5. Energy Efficiency Systems – Solar inverters and power distribution.
Its low on-resistance (RDS(on)) and high current capability make it suitable for high-efficiency, compact designs.
1. Power Switching – Efficient load switching in DC-DC converters and power supplies.
2. Motor Control – Driving motors in automotive and industrial systems.
3. Battery Management – Reverse polarity protection and discharge control.
4. Automotive Applications – Electronic control units (ECUs), lighting, and infotainment systems.
5. Energy Efficiency Systems – Solar inverters and power distribution.
Its low on-resistance (RDS(on)) and high current capability make it suitable for high-efficiency, compact designs.
Package
The AUIRF5210S is a P-channel HEXFET power MOSFET housed in a TO-263 (D2PAK) surface-mount package. This package type offers high power dissipation, efficient thermal performance, and is commonly used in power electronics applications. The TO-263 is a larger variant of the TO-220, designed for SMT assembly.
