APTM60H23FT1G

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APTM60H23FT1G

+物料清單

MOSFET 4N-CH 600V 20A SP1

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier Microchip Technology
Package / Case Bulk
Part Status Active
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain(Id) @ 25°C 20A
Rds On(Max) @ Id Vgs 276mOhm @ 17A, 10V
Vgs(th)(Max) @ Id 5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 165nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 5316pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

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