APTM100H80FT1G

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APTM100H80FT1G

+物料清單

MOSFET 4N-CH 1000V 11A SP1

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7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier Microchip Technology
Package / Case Bulk
Part Status Obsolete
FET Type 4 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain(Id) @ 25°C 11A
Rds On(Max) @ Id Vgs 960mOhm @ 9A, 10V
Vgs(th)(Max) @ Id 5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 150nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 3876pF @ 25V
Power - Max 208W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount

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