規格
| 屬性 | 價值 |
| Supplier | Microchip Technology |
| Package / Case | Tube |
| Series | POWER MOS 8™ |
| Part Status | Obsolete |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown(Max) | 600 V |
| Current - Collector(Ic)(Max) | 78 A |
| Current - Collector Pulsed(Icm) | 130 A |
| Vce(on)(Max) @ Vge Ic | 1.6V @ 15V, 26A |
| Power - Max | 337 W |
| Switching Energy | 409µJ (on), 450µJ (off) |
| Input Type | Standard |
| Gate Charge | 128 nC |
| Td(on / off) @ 25°C | 16ns/102ns |
| Test Condition | 400V, 26A, 4.7Ohm, 15V |
| Mounting Type | Through Hole |
