規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Ta), 34A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1835 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3x3) |
概述
Equivalent
The AONR36366 is a dual N-channel MOSFET. Equivalent or similar products include:
- Infineon BSC014N06NS
- ON Semiconductor NVTFS5C466N
- Vishay SiR872DP
- Texas Instruments CSD18532Q5A
These alternatives offer comparable specs (voltage, current, RDS(on)). Verify pin compatibility and electrical characteristics for your application.
- Infineon BSC014N06NS
- ON Semiconductor NVTFS5C466N
- Vishay SiR872DP
- Texas Instruments CSD18532Q5A
These alternatives offer comparable specs (voltage, current, RDS(on)). Verify pin compatibility and electrical characteristics for your application.
Features
The AONR36366 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 3.6mΩ (at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK) for easy mounting and heat dissipation
- Gate Threshold Voltage (VGS(th)): 2-4V
- Applications: Power management, DC-DC converters, motor control, and battery protection
Its low RDS(on) and high current handling make it ideal for high-power, low-loss switching in compact designs.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 3.6mΩ (at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK) for easy mounting and heat dissipation
- Gate Threshold Voltage (VGS(th)): 2-4V
- Applications: Power management, DC-DC converters, motor control, and battery protection
Its low RDS(on) and high current handling make it ideal for high-power, low-loss switching in compact designs.
Pinout
The AONR36366 is a 5-pin dual N-channel MOSFET in a DFN-5 package. Its pin functions are as follows:
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1 & Drain 2): Common drain connection for both MOSFETs.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Controls the second N-channel MOSFET.
This device is commonly used for power switching in applications like load switches, DC-DC converters, and battery management. It offers low on-resistance (RDS(on)) and high efficiency.
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal for the first MOSFET.
3. Pin 3 (Drain 1 & Drain 2): Common drain connection for both MOSFETs.
4. Pin 4 (Source 2): Source terminal for the second MOSFET.
5. Pin 5 (Gate 2): Controls the second N-channel MOSFET.
This device is commonly used for power switching in applications like load switches, DC-DC converters, and battery management. It offers low on-resistance (RDS(on)) and high efficiency.
Manufacturer
The AONR36366 is a MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Alpha & Omega Semiconductor (AOS).
Alpha & Omega Semiconductor is a semiconductor company specializing in power management solutions, including power MOSFETs, ICs, and other components for computing, consumer electronics, and industrial applications. Founded in 2000 and headquartered in the U.S., AOS is known for its high-efficiency power semiconductors.
Alpha & Omega Semiconductor is a semiconductor company specializing in power management solutions, including power MOSFETs, ICs, and other components for computing, consumer electronics, and industrial applications. Founded in 2000 and headquartered in the U.S., AOS is known for its high-efficiency power semiconductors.
Package
The package type for AONR36366 is typically DFN (Dual Flat No-leads) or QFN (Quad Flat No-leads), commonly used for power MOSFETs. It features a compact, surface-mount design with exposed thermal pads for heat dissipation. Exact dimensions (e.g., 3.3x3.3mm or 5x6mm) vary by manufacturer—check the datasheet for specifics.
