規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 24A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 16.5mOhm @ 12A, 10V |
| Vgs(th)(Max) @ Id | 2.3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1180 pF @ 15 V |
| Power Dissipation (Max) | 4.1W (Ta), 24W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN-EP (3x3) |
概述
Equivalent
The AONR21321 is a dual N-channel MOSFET. Equivalent or similar products include:
- Infineon BSC014N06NS
- ON Semiconductor NVTFS5C670N
- Vishay SiR872DP
- TI CSD18532Q5A
These alternatives offer comparable specs (voltage, current, RDS(on)). Verify pinout and parameters for exact compatibility.
- Infineon BSC014N06NS
- ON Semiconductor NVTFS5C670N
- Vishay SiR872DP
- TI CSD18532Q5A
These alternatives offer comparable specs (voltage, current, RDS(on)). Verify pinout and parameters for exact compatibility.
Features
The AONR21321 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), suitable for surface mounting
- Gate Drive Voltage (VGS): ±20V (max)
- Low Gate Charge (Qg): Enhances switching efficiency
- Avalanche Energy Rated: Improves reliability in rugged conditions
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), suitable for surface mounting
- Gate Drive Voltage (VGS): ±20V (max)
- Low Gate Charge (Qg): Enhances switching efficiency
- Avalanche Energy Rated: Improves reliability in rugged conditions
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.
Pinout
The AONR21321 is a dual N-channel MOSFET in a DFN-8 (3x3) package with 8 pins.
Key Functions:
- Pins 1, 2, 3, 8: Drain (D1) of MOSFET 1.
- Pins 5, 6, 7: Drain (D2) of MOSFET 2.
- Pin 4: Shared source (S1/S2) and gate (G1/G2) for both MOSFETs.
Designed for high-efficiency power applications like DC-DC converters, it offers low on-resistance (RDS(on)) and fast switching.
Key Functions:
- Pins 1, 2, 3, 8: Drain (D1) of MOSFET 1.
- Pins 5, 6, 7: Drain (D2) of MOSFET 2.
- Pin 4: Shared source (S1/S2) and gate (G1/G2) for both MOSFETs.
Designed for high-efficiency power applications like DC-DC converters, it offers low on-resistance (RDS(on)) and fast switching.
Manufacturer
The manufacturer of AONR21321 is Alpha & Omega Semiconductor (AOS), a company specializing in power semiconductors and ICs. AOS designs and produces a wide range of power management solutions, including MOSFETs, diodes, and power ICs, serving industries like computing, consumer electronics, and automotive. The AONR21321 is a high-performance N-channel MOSFET optimized for power efficiency in applications such as DC-DC converters and voltage regulation.
AOS is known for its innovation in power semiconductor technology and operates globally with design and manufacturing facilities in the U.S., China, and South Korea. The company focuses on energy-efficient solutions for modern electronics.
AOS is known for its innovation in power semiconductor technology and operates globally with design and manufacturing facilities in the U.S., China, and South Korea. The company focuses on energy-efficient solutions for modern electronics.
