規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 54A (Ta), 150A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.7mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 64 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3430 pF @ 15 V |
| Power Dissipation (Max) | 7.4W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (5x6) |
概述
Description
*AON6512* is a power MOSFET transistor designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency circuits (e.g., DC-DC converters, motor drives).
- Voltage Rating: 30V drain-to-source voltage (VDS), suitable for 12V–24V systems.
- Compact Package: Available in DFN (3x3mm) or SOIC-8 for space-constrained designs.
Common uses include power management in laptops, servers, and automotive systems. Always refer to the datasheet for detailed specifications and thermal guidelines.
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 30A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency circuits (e.g., DC-DC converters, motor drives).
- Voltage Rating: 30V drain-to-source voltage (VDS), suitable for 12V–24V systems.
- Compact Package: Available in DFN (3x3mm) or SOIC-8 for space-constrained designs.
Common uses include power management in laptops, servers, and automotive systems. Always refer to the datasheet for detailed specifications and thermal guidelines.
Features
The AON6512 is a 30V N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)):
- 3.8 mΩ (max) at VGS = 10V
- 4.5 mΩ (max) at VGS = 4.5V
- High Current Handling:
- 60A continuous drain current (ID)
- 200A pulsed drain current (IDM)
- Fast Switching:
- Low gate charge (QG) for efficient high-frequency operation
- Robust Design:
- Avalanche energy rated for reliability
- Low thermal resistance (RθJA)
- Package:
- DFN5x6 (5mm x 6mm) for compact PCB footprint
- Applications:
- Power management, motor control, DC-DC converters, and battery protection
Designed for high efficiency and thermal performance, the AON6512 is ideal for high-current, low-voltage applications.
- Low On-Resistance (RDS(on)):
- 3.8 mΩ (max) at VGS = 10V
- 4.5 mΩ (max) at VGS = 4.5V
- High Current Handling:
- 60A continuous drain current (ID)
- 200A pulsed drain current (IDM)
- Fast Switching:
- Low gate charge (QG) for efficient high-frequency operation
- Robust Design:
- Avalanche energy rated for reliability
- Low thermal resistance (RθJA)
- Package:
- DFN5x6 (5mm x 6mm) for compact PCB footprint
- Applications:
- Power management, motor control, DC-DC converters, and battery protection
Designed for high efficiency and thermal performance, the AON6512 is ideal for high-current, low-voltage applications.
Manufacturer
The AON6512 is a power MOSFET manufactured by Alpha & Omega Semiconductor (AOS), a U.S.-based semiconductor company specializing in power management solutions. Founded in 2000 and headquartered in Silicon Valley, AOS designs and produces high-performance power semiconductors for applications like computing, consumer electronics, and industrial systems. The company is known for its innovation in power efficiency and compact packaging. The AON6512 is part of their N-channel MOSFET lineup, optimized for high-speed switching and low power loss. AOS operates globally with manufacturing and R&D facilities in Asia and the U.S.
Package
The AON6512 is a MOSFET typically available in a DFN-8 (3x3) package. This compact, surface-mount design offers efficient thermal performance and space-saving benefits, suitable for high-density PCB layouts. Key dimensions are 3mm x 3mm with a low profile.
