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AO6409
+物料清單MOSFET P-CH 20V 5.5A 6TSOP
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製造商阿爾法歐米茄電晶體股份有限公司。
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製造商部分 #AO6409
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數據表 AO6409 DataSheet
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有存貨5035
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 5.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 45mOhm @ 5A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17.2 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 1450 pF @ 10 V |
| PowerDissipation(Max) | 2.1W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-TSOP |
概述
Description
Equivalent
- IRLML6402 (20V, similar specs)
- SI2302 (20V, common replacement)
- DMG2305UX (20V, SOT-23 package)
- FDN340P (20V, P-channel but often used in complementary pairs)
Check voltage/current ratings for compatibility. For exact 30V matches, consider AO3400 (30V) or IRLML6244 (30V). Always verify datasheets for your application.
Features
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 40mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss)
- Package: DFN3x3 (3mm x 3mm) for compact designs
- Applications: Power management, load switching, battery protection
It offers efficient performance in space-constrained applications.
Manufacturer
Application
1. Power Management – Switching and load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in voltage regulators.
4. Motor Control – Driving small motors in consumer electronics.
5. LED Drivers – Controlling LED backlighting and lighting systems.
Its low on-resistance (RDS(on)) and compact package (e.g., SOT-23) make it ideal for space-constrained, high-efficiency applications.