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70V24L55PFI
+物料清單IC SRAM 64KBIT PARALLEL 100TQFP
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製造商瑞薩電子
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製造商部分 #70V24L55PFI
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有存貨5619
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規格
| 屬性 | 價值 |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 64Kbit |
| Memory Organization | 4K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP |
| Base Product Number | 70V24L |
概述
Description
Such components are commonly used in applications requiring reliable power supply, signal amplification, or efficient energy conversion. Understanding the specifications, including voltage, current ratings, and application context, is crucial for integrating this component into a system. Always refer to the manufacturer's datasheet for detailed specifications, application notes, and safety guidelines when working with or selecting this component for a project.
Equivalent
1. 70V24L55 (without the 'PFI' designation)
2. M48T35-70V
3. M48T58-70V
Compatibility may vary based on specific application requirements, so it's essential to check the datasheets for voltage, pin configuration, and functionality before substituting.
Features
1. Voltage and Capacity: It offers a nominal voltage of 70V and a capacity of 24Ah, ensuring a robust energy supply.
2. High Energy Density: The battery provides a compact and lightweight solution, making it ideal for space-constrained environments.
3. Extended Cycle Life: It supports multiple charge and discharge cycles, enhancing longevity and reducing replacement frequency.
4. Rapid Charging: The battery can be charged quickly, minimizing downtime for applications that require efficient energy replenishment.
5. Built-in Protection: Features include overcharge, over-discharge, and short-circuit protection, enhancing safety and reliability.
6. Temperature Tolerance: Designed to operate in a wide temperature range, making it suitable for various environmental conditions.
7. Modular Design: This allows for easy integration into existing systems and scalability for larger applications.
Overall, the 70V24L55PFI combines performance, safety, and efficiency for demanding energy needs.
Pinout
- Data Pins (D0-D23): 24 data lines for input and output.
- Address Pins (A0-A10): 11 address lines for selecting memory locations.
- Chip Enable (CE): Activates the memory chip when low.
- Output Enable (OE): Controls the output buffers; active low to enable data output.
- Write Enable (WE): Activates write mode when low.
- Ground (GND): Common reference point for the power supply.
- Power Supply (Vcc): Supplies power to the chip.
This SRAM device is used in various applications that require fast data access and low power consumption.
Manufacturer
Application
1. Telecommunications: Enhancing signal strength in wireless networks.
2. Broadcasting: Amplifying audio and video signals for radio and television transmission.
3. Public Address Systems: Delivering clear sound in large venues.
4. Radar and Sonar Systems: Boosting signals for improved detection and accuracy.
5. Medical Equipment: Supporting imaging and diagnostic devices.
6. Industrial Automation: Driving sensors and actuators in control systems.
Its robust performance and efficiency make it suitable for diverse electronic applications requiring reliable power amplification.