2SK3557-7-TB-E

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2SK3557-7-TB-E

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RF MOSFET N-CH JFET 5V 3CP

  • 製造商安森美

  • 製造商部分 #2SK3557-7-TB-E

  • 包裹 SC-59

  • 有存貨1302

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正品保證

規格

屬性 價值
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Active
Transistor Type N-Channel JFET
Frequency 1kHz
Voltage - Test 5 V
Current Rating (Amps) 50mA
Noise Figure 1dB
Current - Test 1 mA
Voltage - Rated 15 V

概述

Description

The 2SK3557-7-TB-E is a N-channel MOSFET designed for high-speed switching applications, commonly used in power supplies, motor control, and DC-DC converters.
### Key Features:
- Voltage Rating: 600V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): ~0.65Ω (typ.)
- Fast Switching Speed: Optimized for efficiency
- Package: TO-220F (isolated tab for better thermal performance)
### Applications:
- Switching regulators
- Inverters
- Industrial power systems
### Advantages:
- High voltage tolerance
- Low power loss
- Compact, robust packaging
This MOSFET is suitable for high-performance circuits requiring efficient power handling. For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the 2SK3557-7-TB-E (N-channel MOSFET) include:
- IRFZ44N (Vishay)
- IRLZ44N (International Rectifier)
- FQP30N06L (Fairchild/ON Semi)
- STP55NF06L (STMicroelectronics)
These alternatives offer similar specs (e.g., ~60V Vds, ~50A Id, low Rds(on)). Verify pinout and parameters for exact compatibility.

Features

The 2SK3557-7-TB-E is a N-channel MOSFET with the following key features:
- Voltage Rating: 600V
- Current Rating: 10A (continuous)
- Low On-Resistance (RDS(on)): 0.65Ω (max)
- Fast Switching Speed: Suitable for high-frequency applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Package: TO-220F (isolated type for better thermal performance)
- Applications: Power supplies, motor drives, inverters
Designed for high-voltage, high-speed switching, it offers low power loss and good thermal characteristics.

Pinout

The 2SK3557-7-TB-E is a N-channel MOSFET with 3 pins (Gate, Drain, Source).
Key Functions:
- Gate (G): Controls the switching operation.
- Drain (D): Connects to the load (high-voltage side).
- Source (S): Ground/reference connection.
Features:
- High voltage tolerance (typically 600V).
- Low on-resistance for efficient power handling.
- Used in power switching applications (e.g., inverters, power supplies).
Package: TO-220F (isolated tab for heat dissipation).

Package

The 2SK3557-7-TB-E is a MOSFET transistor typically available in a TO-263-7L (D2PAK) package. This surface-mount type offers efficient thermal performance and is commonly used in power applications. The "TB" in the part number often indicates tape and reel packaging for automated assembly. For exact details, refer to the manufacturer's datasheet.

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