規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 150 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50 V |
| VceSaturation(Max)@IbIc | 400mV @ 5mA, 50mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 180 @ 1mA, 6V |
| Power-Max | 200 mW |
| Frequency-Transition | 180MHz |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概述
Description
The 2SC2412KT146R is a high-frequency NPN bipolar junction transistor (BJT) designed for RF amplification and switching applications. Key features include:
- High Transition Frequency (fT): ~200 MHz, suitable for RF and VHF bands.
- Low Noise: Optimized for low-noise amplifier (LNA) circuits.
- Compact Package: Typically in a small surface-mount (SOT-23 or similar) form factor.
- Voltage/Current Ratings: Moderate collector-emitter voltage (VCE ~20V) and current (IC ~50mA).
Commonly used in wireless communication devices, FM radios, and signal processing circuits. Check datasheets for exact specifications, as variants may exist.
- High Transition Frequency (fT): ~200 MHz, suitable for RF and VHF bands.
- Low Noise: Optimized for low-noise amplifier (LNA) circuits.
- Compact Package: Typically in a small surface-mount (SOT-23 or similar) form factor.
- Voltage/Current Ratings: Moderate collector-emitter voltage (VCE ~20V) and current (IC ~50mA).
Commonly used in wireless communication devices, FM radios, and signal processing circuits. Check datasheets for exact specifications, as variants may exist.
Equivalent
The 2SC2412KT146R is an NPN RF transistor. Equivalent or similar alternatives include:
- 2SC3356 (Rohm)
- BFG591 (NXP)
- BFR93A (Infineon)
- MMBT918 (ON Semiconductor)
These substitutes offer comparable RF performance in amplification and switching applications. Always verify pinout, specs, and datasheet compatibility before replacement.
- 2SC3356 (Rohm)
- BFG591 (NXP)
- BFR93A (Infineon)
- MMBT918 (ON Semiconductor)
These substitutes offer comparable RF performance in amplification and switching applications. Always verify pinout, specs, and datasheet compatibility before replacement.
Features
The 2SC2412KT146R is a high-frequency NPN transistor, primarily designed for RF amplification. Key features include:
- High Transition Frequency (fT): ~1.5 GHz, suitable for VHF/UHF applications.
- Low Noise Figure: Ideal for sensitive RF circuits.
- Moderate Power Handling: Collector current (IC) up to 50 mA, collector-emitter voltage (VCEO) of 20 V.
- Small Package (SOT-346/SC-59): Compact for space-constrained designs.
- Low Collector-Emitter Saturation Voltage: Enhances efficiency in switching applications.
Commonly used in RF amplifiers, oscillators, and communication circuits. Check datasheets for exact specifications.
- High Transition Frequency (fT): ~1.5 GHz, suitable for VHF/UHF applications.
- Low Noise Figure: Ideal for sensitive RF circuits.
- Moderate Power Handling: Collector current (IC) up to 50 mA, collector-emitter voltage (VCEO) of 20 V.
- Small Package (SOT-346/SC-59): Compact for space-constrained designs.
- Low Collector-Emitter Saturation Voltage: Enhances efficiency in switching applications.
Commonly used in RF amplifiers, oscillators, and communication circuits. Check datasheets for exact specifications.
Pinout
The 2SC2412KT146R is a 3-pin NPN silicon transistor in a SC-59 (SOT-346) surface-mount package.
Pin Functions:
1. Emitter (E) – Output/ground connection.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Connects to the load/supply voltage.
Key Features:
- Low voltage/high current switching/amplification.
- VCEO: 50V, IC: 100mA.
- Commonly used in RF/IF stages, driver circuits.
For exact specs, refer to the datasheet.
Pin Functions:
1. Emitter (E) – Output/ground connection.
2. Base (B) – Controls transistor switching/amplification.
3. Collector (C) – Connects to the load/supply voltage.
Key Features:
- Low voltage/high current switching/amplification.
- VCEO: 50V, IC: 100mA.
- Commonly used in RF/IF stages, driver circuits.
For exact specs, refer to the datasheet.
Application
The 2SC2412KT146R is a high-frequency NPN transistor commonly used in:
1. RF Amplification – Boosting signals in communication devices.
2. Oscillators – Generating stable frequencies in wireless systems.
3. VHF/UHF Applications – Used in TV tuners, radios, and mobile communication.
4. Low-Noise Amplification (LNA) – Enhancing weak signals in receivers.
Its high gain and low noise make it suitable for precision RF circuits.
1. RF Amplification – Boosting signals in communication devices.
2. Oscillators – Generating stable frequencies in wireless systems.
3. VHF/UHF Applications – Used in TV tuners, radios, and mobile communication.
4. Low-Noise Amplification (LNA) – Enhancing weak signals in receivers.
Its high gain and low noise make it suitable for precision RF circuits.
Package
The 2SC2412KT146R is a bipolar junction transistor (BJT) in a surface-mount package. It typically comes in a SOT-346 (SC-59) package, which is a small, 3-pin plastic package. This type is commonly used for high-frequency amplification and switching applications. The "KT" in the part number often indicates a tape-and-reel packaging for automated assembly.
