規格
| 屬性 | 價值 |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 4 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain(Id) @ 25°C | 31A |
| Rds On(Max) @ Id Vgs | 220mOhm @ 19A, 10V |
| Vgs(th)(Max) @ Id | 6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 160nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 7210pF @ 25V |
| Power - Max | 1140W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |