UCC27710DR vs UCC27425DR

對 UCC27710DR 和 UCC27425DR 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification UCC27710DR UCC27425DR
Part Status Active Active
Driven Configuration Half-Bridge Low-Side
Channel Type Synchronous Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel, P-Channel MOSFET N-Channel, P-Channel MOSFET
Voltage - Supply 10V ~ 20V 4V ~ 15V
Logic Voltage - VILVIH 1.5V, 1.6V 1V, 2V
Current - Peak Output(Source Sink) 500mA, 1A 4A, 4A
High Side Voltage - Max(Bootstrap) 600 V -
Rise / Fall Time(Typ) 40ns, 20ns 20ns, 15ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
Input Type - Inverting, Non-Inverting
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