UCC27325DR vs UCC27200DDAR

對 UCC27325DR 和 UCC27200DDAR 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification UCC27325DR UCC27200DDAR
Part Status Active Active
Driven Configuration Low-Side Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel, P-Channel MOSFET N-Channel MOSFET
Voltage - Supply 4.5V ~ 15V 8V ~ 17V
Logic Voltage - VILVIH 1V, 2V 3V, 8V
Current - Peak Output(Source Sink) 4A, 4A 3A, 3A
Input Type Inverting, Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) - 120 V
Rise / Fall Time(Typ) 20ns, 15ns 8ns, 7ns
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 140°C (TJ)
Mounting Type Surface Mount Surface Mount
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