UCC21222QDRQ1 vs UCC21222DR

對 UCC21222QDRQ1 和 UCC21222DR 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification UCC21222QDRQ1 UCC21222DR
Series Automotive, AEC-Q100 -
Part Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3V ~ 5.5V 3V ~ 5.5V
Logic Voltage - VILVIH 1.25V, 1.6V 1.25V, 1.6V
Current - Peak Output(Source Sink) 4A, 6A 4A, 6A
Input Type CMOS/TTL CMOS/TTL
Rise / Fall Time(Typ) 5ns, 6ns 5ns, 6ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
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