Part A
STP80NF55-08
意法半導體
- Lifecycle
- Active
- Stock
- 4377 件
- Package
- TO-220-3
- Series
- 電晶體-FET、MOSFET-單
對 STP80NF55-08 和 STP80NF10 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | STP80NF55-08 | STP80NF10 |
|---|---|---|
| Series | STripFET™ | STripFET™ II |
| Part Status | Not For New Designs | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 80A (Tc) | 80A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 10V |
| Rds On(Max) @ Id Vgs | 8mOhm @ 40A, 10V | 15mOhm @ 40A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 155 nC @ 10 V | 182 nC @ 10 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3850 pF @ 25 V | 5500 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |