STGW60H65DFB vs STGW60H65DF

對 STGW60H65DFB 和 STGW60H65DF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STGW60H65DFB STGW60H65DF
Supplier - STMicroelectronics
Part Status Last Time Buy Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 650 V 650 V
Current - Collector(Ic)(Max) 80 A 120 A
Current - Collector Pulsed(Icm) 240 A 240 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 60A 1.9V @ 15V, 60A
Power - Max 375 W 360 W
Switching Energy 1.09mJ (on), 626µJ (off) 1.5mJ (on), 1.1mJ (off)
Input Type Standard Standard
Gate Charge 306 nC 206 nC
Td(on / off) @ 25°C 51ns/160ns 67ns/165ns
Test Condition 400V, 60A, 5Ohm, 15V 400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr) 60 ns 62 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
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