STGW40V60DF vs STGW40S120DF3

對 STGW40V60DF 和 STGW40S120DF3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STGW40V60DF STGW40S120DF3
Supplier - STMicroelectronics
Part Status Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 600 V 1200 V
Current - Collector(Ic)(Max) 80 A 80 A
Current - Collector Pulsed(Icm) 160 A 160 A
Vce(on)(Max) @ Vge Ic 2.3V @ 15V, 40A 2.15V @ 15V, 40A
Power - Max 283 W 468 W
Switching Energy 456µJ (on), 411µJ (off) 1.43mJ (on), 3.83mJ (off)
Input Type Standard Standard
Gate Charge 226 nC 129 nC
Td(on / off) @ 25°C 52ns/208ns 35ns/148ns
Test Condition 400V, 40A, 10Ohm, 15V 600V, 40A, 15Ohm, 15V
Reverse Recovery Time (trr) 41 ns 355 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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