STGW40H65DFB vs STGW45NC60VD

對 STGW40H65DFB 和 STGW45NC60VD 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STGW40H65DFB STGW45NC60VD
Supplier STMicroelectronics STMicroelectronics
Part Status Active Obsolete
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown(Max) 650 V 600 V
Current - Collector(Ic)(Max) 80 A 90 A
Current - Collector Pulsed(Icm) 160 A 220 A
Vce(on)(Max) @ Vge Ic 2V @ 15V, 40A 2.4V @ 15V, 30A
Power - Max 283 W 270 W
Switching Energy 498µJ (on), 363µJ (off) 333µJ (on), 537µJ (off)
Input Type Standard Standard
Gate Charge 210 nC 126 nC
Td(on / off) @ 25°C 40ns/142ns 33ns/178ns
Test Condition 400V, 40A, 5Ohm, 15V 390V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 62 ns 45 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Series - PowerMESH™
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