Part A
STGF15H60DF
意法半導體
- Lifecycle
- Active
- Stock
- 7753 件
- Package
- TO-220-3
- Series
- 電晶體-IGBT-單
對 STGF15H60DF 和 STGF10NC60HD 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
意法半導體
意法半導體
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | STGF15H60DF | STGF10NC60HD |
|---|---|---|
| Supplier | STMicroelectronics | STMicroelectronics |
| Part Status | Active | Obsolete |
| IGBT Type | Trench Field Stop | - |
| Voltage - Collector Emitter Breakdown(Max) | 600 V | 600 V |
| Current - Collector(Ic)(Max) | 30 A | 9 A |
| Current - Collector Pulsed(Icm) | 60 A | 30 A |
| Vce(on)(Max) @ Vge Ic | 2V @ 15V, 15A | 2.5V @ 15V, 5A |
| Power - Max | 30 W | 24 W |
| Switching Energy | 136µJ (on), 207µJ (off) | 31.8µJ (on), 95µJ (off) |
| Input Type | Standard | Standard |
| Gate Charge | 81 nC | 19.2 nC |
| Td(on / off) @ 25°C | 24.5ns/118ns | 14.2ns/72ns |
| Test Condition | 400V, 15A, 10Ohm, 15V | 390V, 5A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 103 ns | 22 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Series | - | PowerMESH™ |