SI7469DP-T1-E3 vs SI7463DP-T1-E3

對 SI7469DP-T1-E3 和 SI7463DP-T1-E3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification SI7469DP-T1-E3 SI7463DP-T1-E3
Series TrenchFET® TrenchFET®
Part Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 40 V
Current - Continuous Drain(Id) @ 25°C 28A (Tc) 11A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 25mOhm @ 10.2A, 10V 9.2mOhm @ 18.6A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 160 nC @ 10 V 140 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4700 pF @ 40 V -
Power Dissipation (Max) 5.2W (Ta), 83.3W (Tc) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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