SI2304BDS-T1-E3 vs SI2307BDS-T1-E3

對 SI2304BDS-T1-E3 和 SI2307BDS-T1-E3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2304BDS-T1-E3 SI2307BDS-T1-E3
Series TrenchFET® TrenchFET®
Part Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C 2.6A (Ta) 2.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 70mOhm @ 2.5A, 10V 78mOhm @ 3.2A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4 nC @ 5 V 15 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 225 pF @ 15 V 380 pF @ 15 V
Power Dissipation (Max) 750mW (Ta) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare 詢價