SI2302CDS-T1-E3 vs SI2301BDS-T1-E3

對 SI2302CDS-T1-E3 和 SI2301BDS-T1-E3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI2302CDS-T1-E3

矽尼克斯

Lifecycle: Active
Stock: 5255 件
Package: SOT-23-3
Series: 電晶體-FET、MOSFET-單

+物料清單詢價

Part B

SI2301BDS-T1-E3

矽尼克斯

Lifecycle: Active
Stock: 2067 件
Package: SOT-23-3
Series: 電晶體-FET、MOSFET-單

+物料清單詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SI2302CDS-T1-E3	SI2301BDS-T1-E3
Series	TrenchFET®	TrenchFET®
Part Status	Active	Active
FET Type	N-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	20 V
Current - Continuous Drain(Id) @ 25°C	2.6A (Ta)	2.2A (Ta)
Drive Voltage(Max Rds On Min Rds On)	2.5V, 4.5V	2.5V, 4.5V
Rds On(Max) @ Id Vgs	57mOhm @ 3.6A, 4.5V	100mOhm @ 2.8A, 4.5V
Vgs(th)(Max) @ Id	850mV @ 250µA	950mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs	5.5 nC @ 4.5 V	10 nC @ 4.5 V
Vgs(Max)	±8V	±8V
Power Dissipation (Max)	710mW (Ta)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Input Capacitance(Ciss)(Max) @ Vds	-	375 pF @ 6 V

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