SI2308BDS-T1-GE3 vs SI2301-TP

對 SI2308BDS-T1-GE3 和 SI2301-TP 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

SI2301-TP

微型商業公司

Lifecycle
Active
Stock
3274 件
Package
SOT-23-3
Series
電晶體-FET、MOSFET-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2308BDS-T1-GE3 SI2301-TP
Series TrenchFET® -
Part Status Obsolete Active
Base Product Number SI2308 -
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 2.8A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 120mOhm @ 2.8A, 4.5V
Vgs(th)(Max) @ Id - 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 14.5 nC @ 4.5 V
Vgs(Max) - ±8V
Input Capacitance(Ciss)(Max) @ Vds - 880 pF @ 6 V
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