SBC846BWT1G vs SBC847CDW1T1

對 SBC846BWT1G 和 SBC847CDW1T1 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SBC846BWT1G SBC847CDW1T1
Supplier - Rochester Electronics, LLC
Part Status Active Active
Series Automotive, AEC-Q101 -
Transistor Type NPN -
Current - Collector(Ic)(Max) 100 mA -
Voltage - Collector Emitter Breakdown(Max) 65 V -
Vce Saturation(Max) @ Ib Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff(Max) 15nA (ICBO) -
DC Current Gain(h FE)(Min) @ Ic Vce 200 @ 2mA, 5V -
Power - Max 150 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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