SBC846ALT1G vs SBC848BLT1

對 SBC846ALT1G 和 SBC848BLT1 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SBC846ALT1G

安森美

Lifecycle
Active
Stock
17594 件
Package
TO-236-3
Series
電晶體-雙極型電晶體(BJT)-單
Part B

SBC848BLT1

安森美

Lifecycle
Active
Stock
2795 件
Package
TO-236-3
Series
電晶體-雙極型電晶體(BJT)-單

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SBC846ALT1G SBC848BLT1
Supplier onsemi Rochester Electronics, LLC
Series Automotive, AEC-Q101 Automotive, AEC-Q101
Part Status Active Active
Transistor Type NPN NPN
Current - Collector(Ic)(Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown(Max) 65 V 30 V
Vce Saturation(Max) @ Ib Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff(Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 300 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount