NVMFD5C466NLT1G vs NVMFD5877NLWFT3G

對 NVMFD5C466NLT1G 和 NVMFD5877NLWFT3G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification NVMFD5C466NLT1G NVMFD5877NLWFT3G
Part Status Active Obsolete
Technology - MOSFET (Metal Oxide)
Configuration - 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 60V
Current - Continuous Drain (Id) @ 25°C - 6A
Rds On (Max) @ Id, Vgs - 39mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - 540pF @ 25V
Power - Max 3W (Ta), 40W (Tc) 3.2W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - NVMFD5877
Grade - Automotive
Qualification - AEC-Q101
Series Automotive, AEC-Q101 -
FET Type 2 N-Channel (Dual) -
Current - Continuous Drain(Id) @ 25°C 14A (Ta), 52A (Tc) -
Rds On(Max) @ Id Vgs 7.4mOhm @ 10A, 10V -
Vgs(th)(Max) @ Id 2.2V @ 30µA -
Gate Charge(Qg)(Max) @ Vgs 7nC @ 4.5V -
Input Capacitance(Ciss)(Max) @ Vds 997pF @ 25V -
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