NTZD3155CT2G vs NTZD3155CT1H

對 NTZD3155CT2G 和 NTZD3155CT1H 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification NTZD3155CT2G NTZD3155CT1H
Supplier - onsemi
Part Status Active Obsolete
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain(Id) @ 25°C 540mA, 430mA 540mA, 430mA
Rds On(Max) @ Id Vgs 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2.5nC @ 4.5V 2.5nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 150pF @ 16V 150pF @ 16V
Power - Max 250mW 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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