NTJD4105CT1G vs NTJD4158CT2G

對 NTJD4105CT1G 和 NTJD4158CT2G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification NTJD4105CT1G NTJD4158CT2G
Supplier - Rochester Electronics, LLC
Part Status Active Active
FET Type N and P-Channel -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 20V, 8V -
Current - Continuous Drain(Id) @ 25°C 630mA, 775mA -
Rds On(Max) @ Id Vgs 375mOhm @ 630mA, 4.5V -
Vgs(th)(Max) @ Id 1.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 3nC @ 4.5V -
Input Capacitance(Ciss)(Max) @ Vds 46pF @ 20V -
Power - Max 270mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Compare 詢價