NCP5181DR2G vs NCP51145PDR2G

對 NCP5181DR2G 和 NCP51145PDR2G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification NCP5181DR2G NCP51145PDR2G
Part Status Last Time Buy Obsolete
Applications - LDO (Linear), DDR
Voltage - Input - 1V ~ 5.5V
Number of Outputs - 1
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 85°C
Mounting Type Surface Mount Surface Mount
Driven Configuration Half-Bridge -
Channel Type Independent -
Number of Drivers 2 -
Gate Type N-Channel MOSFET -
Voltage - Supply 10V ~ 20V -
Logic Voltage - VILVIH 0.8V, 2.3V -
Current - Peak Output(Source Sink) 1.4A, 2.2A -
Input Type Non-Inverting -
High Side Voltage - Max(Bootstrap) 600 V -
Rise / Fall Time(Typ) 40ns, 20ns -
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