MUN5330DW1T1G vs MUN5335DW1T2

對 MUN5330DW1T1G 和 MUN5335DW1T2 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MUN5330DW1T1G

安森美

Lifecycle
Active
Stock
16706 件
Package
SC-88
Series
電晶體-雙極型電晶體（BJT）-陣列，預偏置
+物料清單 詢價
Part B

MUN5335DW1T2

安森美

Lifecycle
Active
Stock
3602 件
Package
SC-88
Series
電晶體-雙極型電晶體（BJT）-陣列，預偏置
+物料清單 詢價

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MUN5330DW1T1G MUN5335DW1T2
Supplier onsemi Rochester Electronics, LLC
Part Status Active Obsolete
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector(Ic)(Max) 100mA 100mA
Voltage - Collector Emitter Breakdown(Max) 50V 50V
Resistor - Base(R1) 1kOhms 2.2kOhms
Resistor - Emitter Base(R2) 1kOhms 47kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 3 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 5mA, 10mA -
Current - Collector Cutoff(Max) 500nA -
Power - Max 250mW -
Mounting Type Surface Mount Surface Mount
Compare 詢價