MUN5211DW1T1G vs MUN5235T1

對 MUN5211DW1T1G 和 MUN5235T1 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MUN5211DW1T1G

安森美

Lifecycle
Active
Stock
4451 件
Package
SOT-363-6
Series
電晶體-雙極型電晶體（BJT）-陣列，預偏置
+物料清單 詢價
Part B

MUN5235T1

安森美

Lifecycle
Active
Stock
9118 件
Package
SOT-323
Series
電晶體-雙極型電晶體（BJT）-單預偏置
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MUN5211DW1T1G MUN5235T1
Supplier - onsemi
Part Status Active Obsolete
Transistor Type 2 NPN - Pre-Biased (Dual) NPN - Pre-Biased
Current - Collector(Ic)(Max) 100mA 100 mA
Voltage - Collector Emitter Breakdown(Max) 50V 50 V
Resistor - Base(R1) 10kOhms 2.2 kOhms
Resistor - Emitter Base(R2) 10kOhms 47 kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 35 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff(Max) 500nA 500nA
Power - Max 250mW 202 mW
Mounting Type Surface Mount Surface Mount
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