MMBTA56LT1G vs MMBTA06LT1G

對 MMBTA56LT1G 和 MMBTA06LT1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification MMBTA56LT1G MMBTA06LT1G
Part Status Active Active
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown(Max) 80 V 80 V
Vce Saturation(Max) @ Ib Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff(Max) 100nA (ICBO) 100nA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 50MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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