MMBT5087LT1G vs MMBT5089

對 MMBT5087LT1G 和 MMBT5089 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

MMBT5089

安森美

Lifecycle
Active
Stock
4098 件
Package
TO-236-3
Series
電晶體-雙極型電晶體（BJT）-單
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT5087LT1G MMBT5089
Supplier onsemi,Rochester Electronics, LLC onsemi
Part Status Active Obsolete
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 50 mA 100 mA
Voltage - Collector Emitter Breakdown(Max) 50 V 25 V
Vce Saturation(Max) @ Ib Ic 300mV @ 1mA, 10mA 500mV @ 1mA, 10mA
Current - Collector Cutoff(Max) 50nA (ICBO) 50nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 250 @ 100µA, 5V 400 @ 100µA, 5V
Power - Max 300 mW 350 mW
Frequency - Transition 40MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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