MMBT4401LT1G vs MMBT4403LT1G

對 MMBT4401LT1G 和 MMBT4403LT1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT4401LT1G MMBT4403LT1G
Part Status Active Active
Transistor Type NPN PNP
Current - Collector(Ic)(Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown(Max) 40 V 40 V
Vce Saturation(Max) @ Ib Ic 750mV @ 50mA, 500mA 750mV @ 50mA, 500mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 150mA, 1V 100 @ 150mA, 2V
Power - Max 300 mW 300 mW
Frequency - Transition 250MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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