MJD45H11RLG vs MJD45H11TM

對 MJD45H11RLG 和 MJD45H11TM 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MJD45H11RLG

安森美

Lifecycle
Active
Stock
10534 件
Package
TO-252-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價
Part B

MJD45H11TM

安森美

Lifecycle
Active
Stock
3736 件
Package
TO-252-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MJD45H11RLG MJD45H11TM
Supplier onsemi onsemi
Part Status Active Obsolete
Transistor Type PNP PNP
Current - Collector(Ic)(Max) 8 A 8 A
Voltage - Collector Emitter Breakdown(Max) 80 V 80 V
Vce Saturation(Max) @ Ib Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff(Max) 1µA 10µA
DC Current Gain(h FE)(Min) @ Ic Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 90MHz 40MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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