LTC4446EMS8E#PBF vs LTC4444MPMS8E#TRPBF

對 LTC4446EMS8E#PBF 和 LTC4444MPMS8E#TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification LTC4446EMS8E#PBF LTC4444MPMS8E#TRPBF
Part Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 7.2V ~ 13.5V 7.2V ~ 13.5V
Logic Voltage - VILVIH 1.85V, 3.25V 1.85V, 3.25V
Current - Peak Output(Source Sink) 2.5A, 3A 2.5A, 3A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) 114 V 114 V
Rise / Fall Time(Typ) 8ns, 5ns 8ns, 5ns
Operating Temperature -40°C ~ 85°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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