LTC4446EMS8E#PBF vs LTC4441IMSE#TRPBF

對 LTC4446EMS8E#PBF 和 LTC4441IMSE#TRPBF 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification LTC4446EMS8E#PBF LTC4441IMSE#TRPBF
Part Status Active Active
Driven Configuration Half-Bridge Low-Side
Channel Type Independent Single
Number of Drivers 2 1
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 7.2V ~ 13.5V 5V ~ 25V
Logic Voltage - VILVIH 1.85V, 3.25V 1.8V, 2V
Current - Peak Output(Source Sink) 2.5A, 3A 6A, 6A
Input Type Non-Inverting Non-Inverting
Rise / Fall Time(Typ) 8ns, 5ns 13ns, 8ns
Operating Temperature -40°C ~ 85°C -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
High Side Voltage - Max(Bootstrap) 114 V -